BSG0811ND
¥22.2949
库存 45342 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥22.2949
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥20.0654
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥18.9507
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥17.8359
|
| 产品属性 |
属性值 |
| 型号 |
BSG0811ND |
| 品牌 |
Infineon Technologies |
| 封装 |
TISON-8 |
| 描述 |
MOSFET TRENCH <= 40V |
| 通道 |
2 Channel |
| Vds-漏源极击穿电压 |
25 V |
| Id-连续漏极电流 |
50 A, 50 A |
| Rds On-漏源导通电阻 |
2.4 mOhms, 3.2 mOhms |
| Vgs – 栅极-源极电压 |
– 16 V, + 16 V |
| Pd-功率耗散 |
2.5 W, 6.25 W |
| Vgs th-栅源极阈值电压 |
– 16 V, + 16 V |
| Qg-栅极电荷 |
5.6 nC, 20 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
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