GS-065-060-5-T-A-MR
¥338.2994
库存 688 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥338.2994
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥304.4695
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥287.5545
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥270.6395
|
| 产品属性 |
属性值 |
| 型号 |
GS-065-060-5-T-A-MR |
| 品牌 |
GaN Systems |
| 封装 |
|
| 描述 |
MOSFET Automotive 650V, 60A, GaN E-mode, GaNPX package, Top-side cooled |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
650 V |
| Id-连续漏极电流 |
60 A |
| Rds On-漏源导通电阻 |
32 mOhms |
| Vgs – 栅极-源极电压 |
– 10 V, + 7 V |
| Pd-功率耗散 |
|
| Vgs th-栅源极阈值电压 |
– 10 V, + 7 V |
| Qg-栅极电荷 |
14 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
Product has been added to your cart
