GS66516B-TR
¥332.4347
库存 581 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥332.4347
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥299.1912
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥282.5695
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥265.9478
|
| 产品属性 |
属性值 |
| 型号 |
GS66516B-TR |
| 品牌 |
GaN Systems |
| 封装 |
|
| 描述 |
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
650 V |
| Id-连续漏极电流 |
60 A |
| Rds On-漏源导通电阻 |
32 mOhms |
| Vgs – 栅极-源极电压 |
– 10 V, + 7 V |
| Pd-功率耗散 |
|
| Vgs th-栅源极阈值电压 |
– 10 V, + 7 V |
| Qg-栅极电荷 |
14.2 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
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