IGLD60R070D1AUMA3
¥106.1748
库存 2784 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥106.1748
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥95.5573
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥90.2486
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥84.9398
|
| 产品属性 |
属性值 |
| 型号 |
IGLD60R070D1AUMA3 |
| 品牌 |
Infineon Technologies |
| 封装 |
LSON-8 |
| 描述 |
MOSFET GAN HV |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
600 V |
| Id-连续漏极电流 |
15 A |
| Rds On-漏源导通电阻 |
70 mOhms |
| Vgs – 栅极-源极电压 |
– 10 V, + 10 V |
| Pd-功率耗散 |
114 W |
| Vgs th-栅源极阈值电压 |
– 10 V, + 10 V |
| Qg-栅极电荷 |
5.8 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
Product has been added to your cart
