IMBG65R083M1HXTMA1
¥66.1502
库存 1003 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥66.1502
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥59.5352
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥56.2277
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥52.9202
|
| 产品属性 |
属性值 |
| 型号 |
IMBG65R083M1HXTMA1 |
| 品牌 |
Infineon Technologies |
| 封装 |
|
| 描述 |
MOSFET SILICON CARBIDE MOSFET |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
650 V |
| Id-连续漏极电流 |
28 A |
| Rds On-漏源导通电阻 |
111 mOhms |
| Vgs – 栅极-源极电压 |
– 5 V, + 23 V |
| Pd-功率耗散 |
126 W |
| Vgs th-栅源极阈值电压 |
– 5 V, + 23 V |
| Qg-栅极电荷 |
44 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 175 C |
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