RGT8NS65DGC9
¥17.0856
库存 974 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥17.0856
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥15.3770
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥14.5228
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥13.6685
|
| 产品属性 |
属性值 |
| 型号 |
RGT8NS65DGC9 |
| 品牌 |
ROHM Semiconductor |
| 封装 |
TO-262-3 |
| 描述 |
IGBT 晶体管 ROHM’s IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
| 系列 |
|
| 发射极最大电压 |
650 V |
| 射极饱和电压 |
1.65 V |
| 栅极/发射极最大电压 |
– 30 V, 30 V |
| 连续集电极电流 |
8 A |
| Pd-功率耗散 |
65 W |
| 最小工作温度 |
– 40 C |
| 最大工作温度 |
+ 175 C |
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