SCTWA35N65G2V
¥104.3894
库存 687 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥104.3894
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥93.9505
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥88.7310
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥83.5115
|
| 产品属性 |
属性值 |
| 型号 |
SCTWA35N65G2V |
| 品牌 |
STMicroelectronics |
| 封装 |
HiP-247-3 |
| 描述 |
MOSFET 650 V 45 A 75 mOhm |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
650 V |
| Id-连续漏极电流 |
45 A |
| Rds On-漏源导通电阻 |
67 mOhms |
| Vgs – 栅极-源极电压 |
– 10 V, + 22 V |
| Pd-功率耗散 |
240 W |
| Vgs th-栅源极阈值电压 |
– 10 V, + 22 V |
| Qg-栅极电荷 |
73 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 200 C |
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