SIHB105N60EF-GE3
¥23.5944
库存 8215 件
数量 | 价格 |
---|---|
1 - 9 | ¥23.5944 |
10 - 99 | ¥21.2350 |
100 - 999 | ¥20.0552 |
1000 + | ¥18.8755 |
¥23.5944
Title | 数量 | 价格 |
---|---|---|
Bulk/tiered discount - sample | 1 - 9 | 0% ¥23.5944 |
Bulk/tiered discount - sample | 10 - 99 | 10% ¥21.2350 |
Bulk/tiered discount - sample | 100 - 999 | 15% ¥20.0552 |
Bulk/tiered discount - sample | 1000 + | 20% ¥18.8755 |
产品属性 | 属性值 |
型号 | SIHB105N60EF-GE3 |
品牌 | Vishay / Siliconix |
封装 | |
描述 | MOSFET EF Series Pwr MOSFET w/Fast Body Diode |
通道 | 1 Channel |
Vds-漏源极击穿电压 | 600 V |
Id-连续漏极电流 | 29 A |
Rds On-漏源导通电阻 | 102 mOhms |
Vgs – 栅极-源极电压 | – 30 V, + 30 V |
Pd-功率耗散 | 208 W |
Vgs th-栅源极阈值电压 | – 30 V, + 30 V |
Qg-栅极电荷 | 35 nC |
最小工作温度 | – 55 C |
最大工作温度 | + 150 C |