SIHK125N60E-T1-GE3
¥40.9286
库存 3976 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥40.9286
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥36.8357
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥34.7893
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥32.7429
|
| 产品属性 |
属性值 |
| 型号 |
SIHK125N60E-T1-GE3 |
| 品牌 |
Vishay Semiconductors |
| 封装 |
PowerPak-9 |
| 描述 |
MOSFET N-CHANNEL 600V |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
600 V |
| Id-连续漏极电流 |
21 A |
| Rds On-漏源导通电阻 |
125 mOhms |
| Vgs – 栅极-源极电压 |
– 30 V, + 30 V |
| Pd-功率耗散 |
132 W |
| Vgs th-栅源极阈值电压 |
– 30 V, + 30 V |
| Qg-栅极电荷 |
29 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
Product has been added to your cart
