SIR1309DP-T1-GE3
¥7.4015
库存 4286 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥7.4015
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥6.6614
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥6.2913
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥5.9212
|
| 产品属性 |
属性值 |
| 型号 |
SIR1309DP-T1-GE3 |
| 品牌 |
Vishay Semiconductors |
| 封装 |
PowerPAK SO-8 |
| 描述 |
MOSFET P-CHANNEL 30 V MOSFET PWRPAK |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
30 V |
| Id-连续漏极电流 |
65.7 A |
| Rds On-漏源导通电阻 |
7.3 mOhms |
| Vgs – 栅极-源极电压 |
– 25 V, + 25 V |
| Pd-功率耗散 |
56.8 W |
| Vgs th-栅源极阈值电压 |
– 25 V, + 25 V |
| Qg-栅极电荷 |
28 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
Product has been added to your cart
