SISHA06DN-T1-GE3
¥7.9778
库存 11939 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥7.9778
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥7.1800
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥6.7811
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥6.3822
|
| 产品属性 |
属性值 |
| 型号 |
SISHA06DN-T1-GE3 |
| 品牌 |
Vishay Semiconductors |
| 封装 |
PowerPAK1212-8SH |
| 描述 |
MOSFET N-Channel 30 V (D-S) MOSFET SH, 3 mO 10V, 4 mO 4.5V |
| 通道 |
1 Channel |
| Vds-漏源极击穿电压 |
30 V |
| Id-连续漏极电流 |
104 A |
| Rds On-漏源导通电阻 |
3 mOhms, 4 mOhms |
| Vgs – 栅极-源极电压 |
– 16 V, + 20 V |
| Pd-功率耗散 |
52 W |
| Vgs th-栅源极阈值电压 |
– 16 V, + 20 V |
| Qg-栅极电荷 |
44.6 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
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