STGW75M65DF2
¥51.5845
库存 600 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥51.5845
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥46.4261
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥43.8468
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥41.2676
|
| 产品属性 |
属性值 |
| 型号 |
STGW75M65DF2 |
| 品牌 |
STMicroelectronics |
| 封装 |
TO-247-3 |
| 描述 |
IGBT 晶体管 Trench gate field-stop IGBT M series, 650 V 75 A low loss |
| 系列 |
STGW75M65DF2 |
| 发射极最大电压 |
650 V |
| 射极饱和电压 |
1.65 V |
| 栅极/发射极最大电压 |
– 20 V, 20 V |
| 连续集电极电流 |
120 A |
| Pd-功率耗散 |
468 W |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 175 C |
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