US6M11TR
¥5.2093
库存 38988 件
| Title
| 数量 | 价格
|
|
Bulk/tiered discount - sample | 1 - 9 |
0%
¥5.2093
|
|
Bulk/tiered discount - sample | 10 - 99 |
10%
¥4.6884
|
|
Bulk/tiered discount - sample | 100 - 999 |
15%
¥4.4279
|
|
Bulk/tiered discount - sample | 1000 + |
20%
¥4.1674
|
| 产品属性 |
属性值 |
| 型号 |
US6M11TR |
| 品牌 |
ROHM Semiconductor |
| 封装 |
SOT-363-6 |
| 描述 |
MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN |
| 通道 |
2 Channel |
| Vds-漏源极击穿电压 |
20 V, 12 V |
| Id-连续漏极电流 |
1.5 A, 1.3 A |
| Rds On-漏源导通电阻 |
180 mOhms, 260 mOhms |
| Vgs – 栅极-源极电压 |
– 10 V, + 10 V |
| Pd-功率耗散 |
1 W |
| Vgs th-栅源极阈值电压 |
– 10 V, + 10 V |
| Qg-栅极电荷 |
1.8 nC, 2.4 nC |
| 最小工作温度 |
– 55 C |
| 最大工作温度 |
+ 150 C |
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